Current-Enhanced Broadband THz Emission from Spintronic Devices
December 14, 2018
Publication
- Current-Enhanced Broadband THz Emission from Spintronic Devices
- December 14, 2018
An ultra-broadband terahertz (THz) emitter covering a wide range of frequencies
from 0.1 to 10 THz is highly desired for spectroscopy applications. So
far, spintronic THz emitters have been proven as one class of efficient THz
sources with a broadband spectrum while the performance in the lower
THz frequency range (0.1–0.5 THz) limits its applications. In this work,
a novel concept of a current-enhanced broad spectrum from spintronic
THz emitters combined with semiconductor materials is demonstrated.
A 2–3 order enhancement of the THz signals in a lower THz frequency
range (0.1–0.5 THz) is observed, in addition to a comparable performance
at higher frequencies from this hybrid emitter. With a bias current, there is a
photoconduction contribution from semiconductor materials, which can be
constructively interfered with the THz signals generated from the magnetic
heterostructures driven by the inverse spin Hall effect (ISHE). These findings
push forward the utilization of metallic heterostructure-based THz emitters
on the ultra-broadband THz emission spectroscopy.
Researcher/Author: Mengji Chen, Yang Wu, Yang Liu, Kyusup Lee, Xuepeng Qiu, Pan He, Jiawei Yu and Hyunsoo Yang
Adv. Optical Mater. 2019, 7, 1801608; https://doi.org/10.1002/adom.201801608
Researcher/Author: Mengji Chen, Yang Wu, Yang Liu, Kyusup Lee, Xuepeng Qiu, Pan He, Jiawei Yu and Hyunsoo Yang
Adv. Optical Mater. 2019, 7, 1801608; https://doi.org/10.1002/adom.201801608