Publication

In this work, we develop anneal-free hafnium zirconium oxide (HZO)-based ferroelectric field-effect transistor (FeFET) with low thermal budget (≤350 °C) suitable for monolithic 3-dimensional (M3D) integration technology. Integrating with room temperature oxide semiconductor, the demonstrated FeFET is fully back-end-of-line (BEOL)-compatible, featuring Ion/off of >105, memory window (MW) of 0.7 V, and good retention performance of 1×104 s. Such excellent electrical characteristics are achieved by HZO surface energy engineering for the ferroelectric orthorhombic phase formation. Furthermore, FeFET exists 32 controllable states with the linearity (α) of 0.31 and -5.03 in potentiation (Pot) and depression (Dep).

Researcher/Author: Tsai Shih-Hao, Chen Chun-Kuei,  Wang Xinghua, Chand Umesh, Hooda Sonu, Zamburg Evgeny, Aaron Thean Voon-Yew 

2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)