Publication

Integrated photonics is playing increasingly a key enabling role within optical computing, optical communication, and optical sensing domains. Despite its tremendous versatility, it has some significant limitations for further development and the lack of suitable integrated optical memory is one of them. Over the decade, extensive works have been demonstrated with different optical memory, including Vertical-Cavity Surface-Emitting-Laser (VCSEL) -based optical memory, Phase-Change-Material (PCM)-based optical memory and 2D-material-based Carrier Trapped Optical Memory (CTOM). However, these memory candidates have some shortcomings, in terms of scalability, thermal stability, integration simplicity and so on. In this work, for the first time, we demonstrate an integrated 2.5D-MoS₂-based metal-semiconductor-metal (MSM) device to function as a non-volatile optical memory at wavelength of 520nm. 2.5D material is an intermediate state of matter between normal 2D material and bulk crystal. 2.5D MoS₂ active material leads to an abrupt resistance switching in optical memory and its switching voltage (VSET) has a high linear correlation to the input light power, which corresponds to “write” operation. To read out the memory, the difference in memory resistance is monitored.

Researcher/Author: Xu Zefeng, Tang Baoshan, Leong Jin Feng, Evgeny Zamburg, Aaron Voon-Yew Thean

2022 Conference on Lasers and Electro-Optics (CLEO)