Extremely- Scaled Channel Thickness ZnO FET with High Mobility 86 cm2/V-s, Low SS of 83mV/dec and Low Thermal Budget Process (<300°C)
June 21, 2022
Publication
- Extremely- Scaled Channel Thickness ZnO FET with High Mobility 86 cm2/V-s, Low SS of 83mV/dec and Low Thermal Budget Process (<300°C)
- June 21, 2022
In this work, we report a facile approach to significantly improve the electrical performances of a bottom-gated zinc oxide (ZnO) FET through In-situ annealing treatment of ZnO channel layer. We demonstrated ZnO FETs with extremely scaled channel thickness t ZnO of 3 nm, achieving low SS of 83 mV/decade and the highest µeff of 86 cm2/V•s. We offered insights into the sensitive role of interlayer dielectric passivation on oxide device stability, often neglected by prior work.
Researcher/Author: Umesh Chand, Chen Chun-Kuei, Manohar Lal,
Sonu Hooda, Hasita Veluri, Zihang Fang, ShihHao Tsai, Aaron Voon-Yew Thean
2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2022, pp. 256-258