Sub-10nm Ultra-thin ZnO Channel FET with Record-High 561 µA/µm ION at VDS 1V, High µ-84 cm2/V-s and1T-1RRAM Memory Cell Demonstration Memory Implications for Energy-Efficient Deep-Learning Computing
July 22, 2022
Publication
- Sub-10nm Ultra-thin ZnO Channel FET with Record-High 561 µA/µm ION at VDS 1V, High µ-84 cm2/V-s and1T-1RRAM Memory Cell Demonstration Memory Implications for Energy-Efficient Deep-Learning Computing
- July 22, 2022
For the first time, we investigated ultra-short-channel ZnO thin-film FETs with L ch = 8 nm with extremely scaled channel thickness t ZnO of 3nm, the device exhibits ultra-low sub-pA/µm off leakage (1.2 pA/µm), high electron mobility (µ eff = 84 cm2/V•s) with record peak transconductance (Gm,) of 254 μS/μm at V DS = 1 V wrt. reported oxide-based transistors, to date, leading to high on-state current (I ON ) of 561 μA/μm. We demonstrated the integration of a ZnO access transistor with Al 2 O 3 RRAM to enable a 1T-1R memory cell, suitable for BEOL-embedded memory. We evaluate the system-level benefits of a hardware accelerator for deep learning to employ FET-RRAM as working memory—up to 10X energy-efficiency benefits can be achieved over current baseline configurations.
Researcher/Author: Umesh Chand, Mohamed M. Sabry Aly+, Manohar Lal, Chen Chun-Kuei, Sonu Hooda, Shih-Hao Tsai, Zihang Fang, Hasita Veluri, Aaron Voon-Yew Thean