Publication

In this work, Shine Thrust 3 researchers under the supersion of principal investigator, Prof Aaron Thean of NUS Department of Electrical and Computer Engineering developed an anneal-free back-end-of-line (BEOL) process for ferroelectric hafnium zirconium oxide (HZO)/indium gallium zinc oxide (IGZO)-based ferroelectric field-effect transistor (FeFET), suitable for in-memory computing. The novel anneal-free BEOL FeFET presented in this work stunningly achieves a competitive performance under a record-low thermal budget. Ultra-low subthreshold swing (SS) of 66.2 mV/dec, large on/off current ratio (ION/IOFF) of >107 , large memory window (MW) of >1.7 V, high endurance of >107 cycles without significant degradation are obtained.

Researcher/Author: Shih-Hao Tsai, Zhonghua Li, Ma Mo Mo Ei Phyu, Zihang Fang

Published in: 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

For paper download, goto: Back-End-of-Line-Compatible Anneal-Free Ferroelectric Field-Effect Transistor (researchgate.net)