Publication

In this work, SHINE Thrust 3 research team under the supervision of Prof Aaron Thean of NUS Department of Electrical and Computer Engineering reported an approach to significantly improve the electrical performances of a bottom-gated Indium-Gallium-Zinc oxide (IGZO) FET by introducing a thin layer of tin doped Indium oxide (ITO). The study demonstrated low thermal budget ITO/IGZO FETs, with extremely scaled channel thickness and length of 4 nm and 50 nm respectively, achieving highest ION770μA/μm , highest μeff of 106 cm2/V⋅s , and low SS of 92 mV/decade. Team also investigated the role of ultra-thin ITO in defect passivation to enhance FET performance.

Researcher/Author: Sonu Hooda, Manohar Lal, Chen Chun-Kuei and Shih-Hao Tsai

Published in: 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

For paper download, goto: BEOL Compatible Extremely Scaled Bilayer ITO/IGZO Channel FET with High Mobility 106 cm2/V.s | IEEE Conference Publication | IEEE Xplore