Publication

We have successfully demonstrated, for the first time, an innovative back-end-of-line (BEOL) compatible electro-optic modulator and memory (EOMM) based on Lithium Niobate on Insulator (LNOI) micro-ring resonator (MRR) integrated with Ferroelectric Hafnium Zirconate Hf 0.5 Zr 0.5 O (HZO) non-volatile analog memory. High non-volatile memory and modulation performances are both achieved in a single compact device, exhibiting high extinction ratio of 13.3 dB, excellent efficiency of 66pm/V, stable nine-state switching, record-high endurance exceeding 10 ⁹ cycles.

This is accomplished by utilizing Pockels effect in LNOI, induced by electric-field effect from remnant HZO ferroelectric polarization. We studied the system implementation of reconfigurable chiplet-interposer photonic interconnect, enabled by the EOMM and EOMM with hybrid thermal-optical modulation. Our model shows a potential 70% energy efficiency improvement over conventional electrical interposer interconnect. We have also tested the integration of the EOMM with POET technologies’ 400G Tx/Rx optical interposer chip and studied a limited scale demonstration of the EOMM device.

Researcher/Author: 

Zefeng Xu, Chun-Kuei Chen, Hong-Lin Lin, Yuan Gao, Wei Ke, Baochang Xu, Pavel Dmitriev, Carlan Arbiz, Evgeny Zamburg, Steven Touzard, Xiulun Cai, James Lee, Suresh Venkatesan, Aaron Danner, Aaron Voon-Yew Thean

Published in:

2023 International Electron Devices Meeting (IEDM)

Added to IEEE Xplore: 07 February 2024

To download the paper, please proceed to:  

http://dx.doi.org/10.1109/IEDM45741.2023.10413812