Publication
- First Demonstration of Fluorine-Treated IGZO FETs with Record-Low Positive Bias Temperature Instability (|ΔVTH|<44mV) at an Elevated Temperature (395 K)
We report enhanced reliability in BEOL-compatible, ITO-enhanced, fluorine-treated IGZO transistors (IGZO:F FETs). The IGZO:F devices demonstrate a record-low threshold-voltage shift (|ΔV_TH|) of 43.7 mV under accelerated stress conditions, measured at an elevated temperature of 395 K and a high oxide electric field (E_OX) of 4 MV/cm for 1 ks, while retaining excellent electrical performance. Furthermore, we propose, for the first time, an atomic-scale mechanism elucidating how fluorine incorporation modulates the migration pathways and energy barriers of hydrogen, thereby contributing to the improved reliability of oxide semiconductor FETs.
Researcher/Author:
Tang Baoshan
Conference Name : Symposium on VLSI Technology & Circuits 2025
Location : Kyoto, Japan
Date : 8-12 June 2025