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Optical modulation is essential for data conversion in optical communication systems, particularly in light of the rapidly increasing data volume and transmission rates, which demand highly energy-efficient modulation technologies. Two-dimensional (2D) material–based optical modulators have emerged as promising candidates; however, their performance is often limited by a trade-off between insertion loss and photon–matter interaction volume. Defect engineering provides a viable strategy to overcome this constraint, as in-gap defect states can prolong carrier recombination lifetimes and thereby enhance modulation efficiency.

In this work, we demonstrate effective modulation of photoluminescence (PL) emission in WSe₂ through electrical carrier injection, which passivates in-gap trap states. This approach establishes a practical pathway for improving the electro-optic performance of 2D material–based modulators.

Researcher/Author: 

Li Jianan

Conference Name : IEEE Semiconductor Interface Specialists Conference (SISC)

Location : San Diego,  USA

Date : 10-13 December 2025

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  • Electrically Tunable Edge Defects for Electro-Optic Modulation in WSe2