Dr. Dina Triyoso underscored the indispensable role of material and process innovation in the continued scaling of semiconductor technologies. She elaborated on the effectiveness of selective processes, such as the studied implementations of Atomic Layer Deposition (ASD) for CMOS scaling, and highlighted how a selective Ruthenium process is key for future interconnect scaling. Dr. Triyoso pointed out that after many decades, advancements in high-k materials, notably the transition from silicon dioxide to hafnium-based high-k dielectrics, are pivotal for deploying high-k metal gate applications in planar technology and fully depleted devices. The future applications of high-k materials, focusing on their ferroelectric properties, include Ferroelectric RAM (FeRAM) and Negative Capacitance Field-Effect Transistors (NCFET).

 
In closing, Dr. Triyoso emphasized that as the semiconductor industry progresses, material innovation becomes increasingly vital. Key areas of focus include precise grain control, maintaining optimal material properties under low thermal budgets, and ensuring resilience to high-temperature processing. Looking ahead, the industry researchers will continue to prioritize refining these processes and materials to meet evolving technological demands. The attendees undoubtedly gained a lot from Dr. Dina’s deep industry insights, which sparked many questions from the floor. We extend our sincere appreciation to Dr. Dina Triyoso for her enlightening presentation and look forward to more thought-provoking discussions on the future of semiconductor technology.