Optical modulation is essential for data conversion in optical communication systems, particularly in light of the rapidly increasing data volume and transmission rates, which demand highly energy-efficient modulation technologies. Two-dimensional (2D) material–based optical modulators have emerged as promising candidates; however, their performance is often limited by a trade-off between insertion loss and photon–matter interaction volume. Defect engineering provides a viable strategy to overcome this constraint, as in-gap defect states can prolong carrier recombination lifetimes and thereby enhance modulation efficiency.
In this work, we demonstrate effective modulation of photoluminescence (PL) emission in WSe₂ through electrical carrier injection, which passivates in-gap trap states. This approach establishes a practical pathway for improving the electro-optic performance of 2D material–based modulators.
Researcher/Author:
Li Jianan
Conference Name : IEEE Semiconductor Interface Specialists Conference (SISC)