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Negative-U Defect Passivation in Oxide-Semiconductor by Channel Defect Self-Compensation Effect to achieve Low Bias Stress VTH Instability of Low-Thermal Budget IGZO TFT and FeFETs

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  • Negative-U Defect Passivation in Oxide-Semiconductor by Channel Defect Self-Compensation Effect to achieve Low Bias Stress VTH Instability of Low-Thermal Budget IGZO TFT and FeFETs